Measurement of electro-optic coefficients of 1.3 lm self-assembled InAs=GaAs quantum dots
نویسندگان
چکیده
The electro-optic properties of 1.3 mm self-assembled InAs=GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4 10 11 m=V and 3.2 10 18 m=V, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate.
منابع مشابه
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